Frustrated Total Internal Reflection Spectra of Diazoquinone–Novolac Photoresist Films

Radiation-induced effects in thin films of diazoquinone–novolac photoresists on silicon irradiated with high-energy electrons (~5 MeV) were investigated by frustrated total internal reflection (FTIR) IR Fourier spectroscopy. It was found that irradiation at a dose more than 3·1015 cm–2 leads to decrease the integral absorption wave numbers region 3700–400 cm–1. The intensity bands due –O–H– and particularly aliphatic –C–H– bonds is increased most strongly during electron irradiation. At ? = 1·1017 methylene (–CH2–) methyl (–CH3) groups comparable noise level. band ~1600 cm–1, vibrations aromatic ring, does not change radiation doses range 3·1014–1·1017 cm–2. obtained experimental data indicate strong cross-linking polymeric components electrons. radiation-induced changes FTIR spectra depend type photoresist (FP9120 S1813 G2 SP15). relationships optical characteristics are explained terms chemistry resins.